Method for forming fin field effect transistor

Method for forming fin field effect transistor

  • CN 106,558,493 B
  • Filed: 09/29/2015
  • Issued: 10/09/2020
  • Est. Priority Date: 09/29/2015
  • Status: Active Grant
First Claim
Patent Images

1. A method for forming a fin field effect transistor (FinFET) is characterized by comprising the following steps:

  • providing a substrate comprising a first region and a second region;

    forming a diamond film on the surface of the substrate;

    etching the diamond film, forming a first through hole in the first area of the diamond film, and forming a second through hole in the second area of the diamond film;

    forming a first insulating layer on the bottom surface of the second through hole;

    after the first insulating layer is formed, forming a first epitaxial layer on the bottom surface of the first through hole and a first intrinsic layer on the top surface of the first epitaxial layer by adopting an epitaxial process, wherein the first epitaxial layer contains first anti-punch-through ions, and the first through hole is filled with the first intrinsic layer;

    forming a second insulating layer on the top surface of the first intrinsic layer;

    removing the first insulating layer;

    after the second insulating layer is formed, forming a second epitaxial layer on the bottom surface of the second through hole and a second intrinsic layer on the top surface of the second epitaxial layer by adopting an epitaxial process, wherein the second epitaxial layer contains second anti-punch-through ions, and the second through hole is filled with the second intrinsic layer;

    removing the second insulating layer;

    the etch back removes a portion of the thickness of the diamond film to form a diamond layer that exposes the first intrinsic layer sidewall surface and the second intrinsic layer sidewall surface.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×