Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

  • CN 106,672,889 B
  • Filed: 08/25/2016
  • Issued: 08/24/2021
  • Est. Priority Date: 11/06/2015
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a first device;

    a second device comprising a device wafer and a cap wafer over the device wafer, the device wafer in contact with the first device, wherein a chamber is formed between the first device and the second device;

    a first hole at least partially disposed in the device wafer of the second device and defined between a first end having a first circumference and a second end having a second circumference;

    a second aperture disposed in the cover wafer of the second device and in communication with and aligned with the first aperture at the second end, the second aperture defined between the second end and a third end having a third circumference, wherein the first aperture passes through a portion of a top surface of the device wafer and the second end is not coplanar with the portion of the top surface of the device wafer; and

    a sealing object for sealing the second hole;

    self-assembling a monolayer film;

    wherein the first end is coupled to the chamber and the self-assembled monolayer is deposition coated on a surface of the chamber coupled to the first end of the first hole, and the third circumference is greater than the first circumference and the second circumference, the first circumference being different from the second circumference.

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