GaN side wall insulated gate fin-type high-electron mobility transistor and manufacturing method thereof

GaN side wall insulated gate fin-type high-electron mobility transistor and manufacturing method thereof

  • CN 106,684,151 A
  • Filed: 12/08/2016
  • Published: 05/17/2017
  • Est. Priority Date: 12/08/2016
  • Status: Active Application
First Claim
Patent Images

1. a kind of GaN side walls insulated gate fin HEMT, the structure of the transistor includes successively from bottom to topSubstrate (1), cushion (2), barrier layer (3), passivation layer (6);

  • One end above the barrier layer (3) is provided with source electrode (4) and anotherOne end is provided with drain electrode (5);

    Passivation layer (6) is provided with above barrier layer (3) between source electrode (4) and drain electrode (5), it is described bluntChange in layer (6) and be provided with groove, it is characterised in that also including GaN base three-dimensional fin and grid (8), the GaN base three-dimensional finSide wall is provided with dielectric (7);

    A part for the grid (8) is covered on the barrier layer under groove (3), forms schottky junctionsTouch;

    Another part of the grid (8) is covered on the dielectric (7) of the side wall of GaN base three-dimensional fin, forms insulated gate knotStructure.

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