Wafer bonding method and preparation method for foreign substrate

Wafer bonding method and preparation method for foreign substrate

  • CN 106,711,027 A
  • Filed: 02/13/2017
  • Published: 05/24/2017
  • Est. Priority Date: 02/13/2017
  • Status: Active Application
First Claim
Patent Images

1. a kind of wafer bonding method, it is characterised in that methods described at least includes:

  • S1:

    First wafer and the second wafer are provided, wherein, first wafer has the first bonding face, the second wafer toolThere is the second bonding face;

    S2:

    First wafer and second wafer are carried out to be bonded preceding pre-add heat treatment;

    S3:

    First bonding face is bonded with second bonding face.

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