Wafer bonding method and heterogeneous substrate preparation method

Wafer bonding method and heterogeneous substrate preparation method

  • CN 106,711,027 B
  • Filed: 02/13/2017
  • Issued: 01/05/2021
  • Est. Priority Date: 02/13/2017
  • Status: Active Grant
First Claim
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1. A wafer bonding method, comprising:

  • s1;

    providing a first wafer and a second wafer, wherein the material of the first wafer is Si or SiO2Ge, GaN, AlN, SiC, lithium niobate, lithium tantalate, a group III-V compound semiconductor, sapphire, or diamond;

    the second wafer is made of Si and SiO2Ge, GaN, AlN, SiC, lithium niobate, lithium tantalate, a group III-V compound semiconductor, sapphire, or diamond, and the material of the second wafer is different from the material of the first wafer;

    the first wafer is provided with a first bonding surface, and the second wafer is provided with a second bonding surface;

    s2;

    performing pre-heating treatment before bonding on the first wafer and the second wafer;

    s3;

    bonding the first bonding surface and the second bonding surface, wherein when bonding is started, the temperatures of the first wafer and the second wafer are kept at the temperature of preheating treatment before the bonding is carried out respectively;

    s4;

    annealing under vacuum or N2

    O2

    Ar、

    He、

    H2And at least one gas in the air, wherein the annealing temperature is 50-1300 ℃

    , and the annealing time is 10 s-48 h.

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