Three-dimensional storage and forming method thereof

Three-dimensional storage and forming method thereof

  • CN 106,876,397 A
  • Filed: 03/07/2017
  • Published: 06/20/2017
  • Est. Priority Date: 03/07/2017
  • Status: Active Application
First Claim
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1. a kind of three-dimensional storage, it is characterised in that including:

  • Substrate, the substrate includes adjacent device region and bonding pad;

    Multiple discrete laminated construction on the device region and bonding pad substrate, the laminated construction includes multiple-layer overlappedGrid;

    The separation layer on device region substrate between adjacent laminates structure;

    Attachment structure on the bonding pad substrate, the attachment structure connects adjacent laminated construction, the connection knotThe electric connection layer of structure including multiple-layer overlapped, each layer electric connection layer two ends connect the grid that same layer is located in adjacent laminates structure respectivelyPole;

    Respectively positioned at some connectors of each layer gate surface, each connector is located at same with the grid for being contacted and contacted gridThe grid of layer and the electric connection layer for being located at same layer with contacted grid are electrically connected.

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