The preparation method of the GaAs base plasma pin diodes of frequency reconfigurable dipole antenna

The preparation method of the GaAs base plasma pin diodes of frequency reconfigurable dipole antenna

  • CN 106,876,873 A
  • Filed: 12/20/2016
  • Published: 06/20/2017
  • Est. Priority Date: 12/20/2016
  • Status: Active Application
First Claim
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1. the preparation method of the GaAs base plasma pin diodes of a kind of frequency reconfigurable dipole antenna, described GaAs bases etc.Ion pin diodes are used to manufacture the frequency reconfigurable dipole antenna, it is characterised in that the frequency reconfigurable dipoleAntenna includes:

  • GaAs base GeOI semiconductor chips (1);

    The GaAs bases GeOI semiconductor chips are fixed on using semiconductor technology(1) the first antenna arm (2), the second antenna arm (3), coaxial feeder (4) and the first direct current biasing line (5), the second direct current on are inclinedPut line (6), the 3rd direct current biasing line (7), the 4th direct current biasing line (8), the 5th direct current biasing line (9), the 6th direct current biasing line(10), the 7th direct current biasing line (11), the 8th direct current biasing line (12);

    Wherein, the first antenna arm (2) and described second dayLine arm (3) is respectively arranged at the both sides of the coaxial feeder (4) and including multiple GaAs bases plasma pin diode strings, in dayWhen line is in running order, the first antenna arm (2) and second antenna arm (3) are according to the multiple GaAs bases plasmaThe regulation of antenna arm lengths is realized in the conducting of pin diode strings with shut-off;

    The first direct current biasing line (5), described second is straightStream offset line (6), the 3rd direct current biasing line (7), the 4th direct current biasing line (8), the 5th direct current biasing line(9), the 6th direct current biasing line (10), the 7th direct current biasing line (11), the 8th direct current biasing line (12) usesThe method of chemical vapor deposition is fixed on the GaAs bases GeOI semiconductor chips (1), and its material is for copper, aluminium or through overdopingPolysilicon in any one;

    Wherein, the preparation method of the GaAs bases plasma pin diodes includes:

    Choose the GeOI substrates of a certain crystal orientation;

    GaAs layers is deposited on the GeOI substrates, isolated area is formed by photoetching process;

    Etch the GeOI substrates and form p-type groove and N-type groove;

    P-type active area and N-type active area are formed using ion implanting in the p-type groove and the N-type groove;

    P-type active area described in photoetching and the N-type active area, form p-type contact zone and N-type contact zone;

    In the p-type contact zone and N-type contact zone lithography fair lead to form lead, to complete the GaAs bases plasmaThe preparation of pin diodes.

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