Tungsten polishing slurry and method of polishing substrate

Tungsten polishing slurry and method of polishing substrate

  • CN 106,883,766 B
  • Filed: 09/29/2016
  • Issued: 08/27/2021
  • Est. Priority Date: 10/02/2015
  • Status: Active Grant
First Claim
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1. A tungsten polishing slurry, comprising:

  • an abrasive for polishing;

    a dispersant for dispersing the abrasive;

    an oxidizing agent for oxidizing the surface of tungsten;

    a catalyst for catalyzing the oxidation of tungsten;

    a first selectivity adjuster for adjusting polishing selectivity between tungsten and an insulating film containing oxide and nitride, wherein the first selectivity adjuster contains at least one of citric acid, acetic acid, maleic acid, succinic acid, malic acid, oxalic acid, ethylenediaminetetraacetic acid, or malonic acid; and

    a second selectivity modifier for modifying a polishing selectivity between the oxide and the nitride,wherein the second selectivity modifier comprises at least one of polyacrylamide, polymethacrylamide, aminoalcohol, ethylenediamine, or diethylenetriamine,wherein the content of the second selectivity modifier is less than the content of the first selectivity modifier,wherein the first selectivity modifier is contained in an amount of 0.1 to 0.3% by weight relative to the total weight of the slurry,wherein the second selectivity modifier is present in an amount of from 0.0025 to 0.005 weight percent relative to the total weight of the slurry.

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