Memory devices and correlation technique including the decoder for program pulse

Memory devices and correlation technique including the decoder for program pulse

  • CN 106,887,251 A
  • Filed: 05/16/2016
  • Published: 06/23/2017
  • Est. Priority Date: 12/16/2015
  • Status: Active Application
First Claim
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1. a kind of integrated circuit, including:

  • Phase transition storage (PCM) cellular array;

    Coupled to multiple bit lines of the array of the PCM cell;

    First decoder circuit, including the corresponding multiple transistors with the first conductivity type, the multiple transistor are coupling inTogether and coupled to the given bit line in the multiple bit line, the multiple transistor is configured as noting program current pulseEnter the PCM cell selected from the array of the PCM cell;

    AndSecond decoder circuit, including the multiple transistors with the second conductivity type, the multiple transistor are coupled simultaneouslyCoupled to the given bit line, the multiple transistor is configured as at the end of described program current impulse to described givenBit line discharges.

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