Semiconductor structure and forming method thereof

Semiconductor structure and forming method thereof

  • CN 106,898,648 B
  • Filed: 12/02/2016
  • Issued: 09/03/2021
  • Est. Priority Date: 12/04/2015
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor structure, comprising:

  • a substrate;

    a fin structure on the substrate;

    a metal gate in the middle and over the fin structure and perpendicular to the fin structure;

    a high-k dielectric layer surrounding the bottom and sidewalls of the metal gate; and

    a first strip of polysilicon at a first edge of the fin structure and parallel to the metal gate,a first dielectric layer between the fin structure and the first polysilicon strip;

    a metal gate dielectric layer between the fin structure and the high-k dielectric layer; and

    a source or drain region between the first polysilicon strip and the metal gate,wherein the first poly strip partially overlaps the source region or the drain region and is coterminous with the fin structure in a top-down view,wherein a material forming the first dielectric layer is different from a material forming the metal gate dielectric layer,wherein the concentration of group III or group V elements in the first polysilicon strip is from 1E19 to 1E22 atoms/cm3In the range of (a) to (b),wherein the first dielectric layer and the metal gate dielectric layer are arranged in sequence on a top surface of the fin structure and separated by the source or drain region, wherein a side edge of the first dielectric layer is aligned with a side edge of the fin structure and the metal gate dielectric layer has a bottom surface in contact with the fin structure and a top surface in contact with the high-k dielectric layer at a bottom of the metal gate.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×