Solar cell and method for manufacturing same

Solar cell and method for manufacturing same

  • CN 106,910,781 B
  • Filed: 12/19/2016
  • Issued: 08/18/2020
  • Est. Priority Date: 12/18/2015
  • Status: Active Grant
First Claim
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1. A solar cell, the solar cell comprising:

  • a semiconductor substrate;

    a first passivation layer on a front surface of the semiconductor substrate;

    a second passivation layer on the rear surface of the semiconductor substrate;

    a front electric field region on the first passivation layer on the front surface of the semiconductor substrate and having a same conductivity type as the semiconductor substrate;

    an emitter region on the second passivation layer on the rear surface of the semiconductor substrate and having a conductivity type opposite to that of the semiconductor substrate;

    a first electrode conductively connected to the front electric field region; and

    a second electrode conductively connected to the emitter region,wherein the front electric field region and the emitter region include at least one of doped amorphous silicon, amorphous silicon oxide, amorphous silicon carbide, indium gallium zinc oxide, titanium oxide, and molybdenum oxide,wherein a thickness of the front electric field region is 1 to 10nm, and a thickness of the emitter region is 3 to 15nm to be greater than a thickness of the front electric field region,wherein a ratio of a thickness of the front electric field region to a thickness of the emitter region is 1;

    1.5 to 1;

    5.5,wherein a ratio of a thickness of the first passivation layer to a thickness of the second passivation layer is 1;

    1 to 1;

    2.5,wherein a ratio of a thickness of the first passivation layer to a thickness of the front electric field region is 1;

    1 to 1;

    2,wherein a ratio of a thickness of the second passivation layer to a thickness of the emitter region is 1;

    2 to 1;

    5, andwherein a ratio of a thickness of the emitter region to a thickness of the second passivation layer is greater than a ratio of a thickness of the front electric field region to a thickness of the first passivation layer.

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