Method for eliminating tailing current of transverse insulated gate bipolar transistor

Method for eliminating tailing current of transverse insulated gate bipolar transistor

  • CN 106,920,840 B
  • Filed: 12/28/2015
  • Issued: 10/16/2020
  • Est. Priority Date: 12/28/2015
  • Status: Active Grant
First Claim
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1. The method for eliminating the tailing current of the lateral insulated gate bipolar transistor is characterized by comprising the following steps of:

  • 1) generating an electric field in the drift region from the anode to the upper surface of the drift region, the transistor being switched from on to off;

    2) introducing a rapidly rising level on a second gate arranged above the drift region, and continuing until the transistor is completely turned off;

    the electric field in the step

         1) is generated by an upper surface electric field strengthening unit (20) arranged at the part of the drift region (2) between the anode (13) and the channel region (3),the electric field strengthening unit (20) is isolated from the drift region (2) through an insulating medium (6);

    the electric field reinforcing unit (20) includes;

    a high-resistance conductive area (7),an accelerating grid electrode heavily-doped region (15) which is connected with the high-resistance conductive region (7) and is positioned at one side of the high-resistance conductive region (7) close to the anode (13),a grounding doped region (16) which is connected with the high-resistance conductive region (7) and is positioned at one side of the high-resistance conductive region (7) close to the channel region (3),a second gate (9) connected to the accelerating gate heavily doped region (15),and a grounding electrode (17) connected with the grounding doped region (16).

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