Cmos image sensor and forming method thereof

Cmos image sensor and forming method thereof

  • CN 106,935,605 A
  • Filed: 03/10/2017
  • Published: 07/07/2017
  • Est. Priority Date: 03/10/2017
  • Status: Active Application
First Claim
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1. a kind of cmos image sensor, it is characterised in that the cmos image sensor includes:

  • Semiconductor substrate, it is formed atThe first oxide layer in the Semiconductor substrate and the first high-K dielectric layer being formed in first oxide layer, wherein, it is describedFirst high-K dielectric layer includes multilayer the first high K dielectric sublayer, and interface is discontinuous between adjacent two layers the first high K dielectric sublayer.

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