Barrier film techniques and constructions for phase change memory elements

Barrier film techniques and constructions for phase change memory elements

  • CN 107,004,765 B
  • Filed: 11/05/2015
  • Issued: 02/05/2021
  • Est. Priority Date: 12/05/2014
  • Status: Active Grant
First Claim
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1. A phase change memory device, comprising:

  • a plurality of Phase Change Memory (PCM) elements, wherein an individual PCM element of the plurality of PCM elements comprises;

    a bottom electrode layer;

    a select device layer disposed on the bottom electrode layer;

    an intermediate electrode layer disposed on the select device layer;

    a phase change material layer disposed on the intermediate electrode layer;

    a top electrode layer disposed on the phase change material layer; and

    a barrier film comprising a group IV transition metal, a group VI transition metal, carbon (C), and nitrogen (N),wherein the barrier film is provided at an interface between the bottom electrode layer and the selection device layer, or at an interface between the selection device layer and the intermediate electrode, or at an interface between the intermediate electrode layer and the phase change material layer, or at an interface between the phase change material layer and the top electrode layer.

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