Resistive memory having thermally isolated regions

Resistive memory having thermally isolated regions

  • CN 107,078,213 B
  • Filed: 09/17/2015
  • Issued: 08/10/2021
  • Est. Priority Date: 10/10/2014
  • Status: Active Grant
First Claim
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1. A resistive memory, comprising:

  • a plurality of memory cells separated by an insulating dielectric material; and

    a first electrode common to the plurality of memory cells,wherein the plurality of memory cells share a common layer including a resistive memory element,wherein each memory cell comprises a second electrode, each second electrode comprising a first region and a second region, the first region having a cross-sectional area less than 1/5 of the cross-sectional area of the second region,wherein the first electrode includes, in order from top to bottom, a first common electrode layer, a second common electrode layer, and a third common electrode layer, the second common electrode layer is formed of a conductive and heat insulating material, the first common electrode layer and the third common electrode layer are formed of a conductive material, and the third common electrode layer is located on a common layer including the resistive memory element.

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