Semiconductor device

Semiconductor device

  • CN 107,112,324 A
  • Filed: 12/17/2014
  • Published: 08/29/2017
  • Est. Priority Date: 12/17/2014
  • Status: Active Application
First Claim
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1. a kind of semiconductor device, it is characterised in that have:

  • IGBT is igbt, and it has n-type drift layer, p-type base layer, n-type emitter layer and in the nThe p-type collector layer that the back side of type drift layer is formed, the p-type base layer and the formation of n-type emitter layer are in the n-type drift layerSurface;

    FWD is fly-wheel diode, its have the n-type drift layer, the n-type drift layer surface formed p-type anode layer,And the n-type cathode layer formed at the back side of the n-type drift layer;

    P-type trap, it is formed at the surface of the n-type drift layer in distribution region and terminal area;

    AndDistribution, it is formed on the p-type trap in the distribution region,Relative to the p-type anode layer, the impurity concentration of the p-type trap is high and depth is deep,The p-type trap is separated with the area just above of the n-type cathode layer, is not formed at the surface of the n-type cathode layer.

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