Photoetching process for manufacturing GPP chip

Photoetching process for manufacturing GPP chip

  • CN 107,123,591 B
  • Filed: 05/09/2017
  • Issued: 08/03/2021
  • Est. Priority Date: 05/09/2017
  • Status: Active Grant
First Claim
Patent Images

1. A photoetching process for manufacturing GPP chips comprises the following steps:

  • (1) gluing;

    coating a negative photoresist without a xylene solvent on the surface of a clean and dry silicon wafer substrate;

    (2) pre-baking;

    baking the base material coated with the photoresist at a certain temperature to remove the solvent in the adhesive film;

    (3) exposure;

    under the irradiation of ultraviolet light penetrating through the mask, the photoresist reacts;

    (4) and (3) developing;

    carrying out constant-temperature development by using an alkaline aqueous solution as a developing solution to form a photoetching pattern;

    (5) fixing;

    washing the base material by using deionized water to remove the developing solution and impurities remained on the surface of the adhesive film;

    (6) post-baking;

    baking the base material at a certain temperature to remove the residual solvent, so that the adhesive film is solidified and compact;

    (7) etching, etching the substrate containing the photoetching pattern by using strong acid mixed etching solution;

    (8) removing the photoresist, and removing the photoresist by using a cleaning solution;

    in the step (2), the temperature of the pre-drying is 95-120 ℃

    , and the time is 2-20 min;

    in the step (6), the post-drying temperature is 180-250 ℃

    , and the time is 20-40 min;

    the negative photoresist without xylene solvent is selected from any one of SUN-WS001, SUN-WS002 and SUN-WS 003.

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