A kind of radioresistance Sence Switch types pFLASH switch element structures and preparation method thereof

A kind of radioresistance Sence Switch types pFLASH switch element structures and preparation method thereof

  • CN 107,180,833 A
  • Filed: 06/22/2017
  • Published: 09/19/2017
  • Est. Priority Date: 06/22/2017
  • Status: Active Application
First Claim
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1. a kind of radioresistance Sence-Switch types pFLASH switch element structures, it is characterized in that:

  • PFLASH switch elements (44)Including the program/erase metal-oxide-semiconductor T1 being prepared on same substrate (00) and signal transmission metal-oxide-semiconductor T2, in the substrate (00)Interior top is provided with N traps (01), and program/erase metal-oxide-semiconductor T1 program/erase pipe active area (22), signal transmit metal-oxide-semiconductor T2'"'"'sSignal transfer tube active area (11) is respectively positioned in N traps (01), and is isolated by the active area isolation body (02B) in N traps (01);

    Program/erase pipe P+ drain regions (09A) and program/erase pipe P+ source regions are provided with program/erase pipe active area (22)(09B), is provided with signal transfer tube P+ drain regions (09C) and signal transfer tube P+ source regions in signal transfer tube active area (11)(09D);

    Tunnel oxidation layer (03) is respectively provided with program/erase pipe active area (22) and signal transfer tube active area (11),The tunnel oxidation layer (03) be provided with floating boom polycrystal layer (04), floating boom polycrystal layer (04) be covered in tunnel oxidation layer (03) andOn active area isolation body (02B), ONO barrier layers (05) is provided with the floating gate polysilicon layer (04), on the ONO barrier layers(05) it is provided with control gate polycrystal layer (06);

    Program/erase pipe P+ drain regions (09A), program/erase pipe P+ source regions (09B) are respectivelyBoth sides positioned at control gate polycrystal layer (06), signal transfer tube P+ drain regions (09C), signal transfer tube P+ source regions (09D) difference positionBoth sides in control gate polycrystal layer (06);

    Side wall (08) is provided with the outside of the control gate polycrystal layer (06), the side wall (08) is supported in tunnel oxidation layer (03)On, and the lateral wall of side wall (08) covering floating boom polycrystal layer (04), ONO barrier layers (05) and control gate polycrystal layer (06);

    ILD dielectric layers (14) are provided with above N traps (01), the ILD dielectric layers (14) are covered in control gate polycrystal layer (06), sideOn wall (08) and N traps (01), metal level (16) is provided with the ILD dielectric layers (14), the metal level includes programming/wipingExcept pipe metallic object and signal transfer tube metallic object, the program/erase pipe metallic object includes and program/erase pipe P+ drain regionsThe program/erase pipe drain metal (16A) of (09A) Ohmic contact and with program/erase pipe P+ source regions (09B) Ohmic contactProgram/erase pipe source metal (16B), the signal transfer tube metallic object includes and signal transfer tube P+ drain region (09C) ohmThe signal transfer tube drain metal of contact and the signal transfer tube source electrode gold with signal transfer tube P+ source regions (09D) Ohmic contactCategory.

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