Transient voltage suppressor and manufacturing method thereof

Transient voltage suppressor and manufacturing method thereof

  • CN 107,301,995 B
  • Filed: 07/12/2017
  • Issued: 12/25/2020
  • Est. Priority Date: 07/12/2017
  • Status: Active Grant
First Claim
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1. A transient voltage suppressor, characterized by:

  • the transient voltage suppressor comprises a P-type substrate and an N-type epitaxial layer formed on the P-type substrate, the N-type epitaxial layer comprises a first part and a second part which are arranged at intervals, the transient voltage suppressor also comprises a first P-type doped region formed on the surface of the first part, a second P-type doped region formed on the surface of the second part, and a P-type epitaxial layer formed on the N-type epitaxial layer, the first P-type doped region and the second P-type doped region, the P-type substrate and the first part form a first diode, the P-type substrate and the second part form a second diode, the first part and the first P-type doped region form a third diode in butt joint with the first diode, the second part and the second P-type doped region form a fourth diode in butt joint with the second diode, the cathode of the first diode is connected with the cathode of the second diode, and the cathode of the third diode is connected with the cathode of the fourth diode;

    the transient voltage suppressor further comprises an oxide layer arranged on the P-type epitaxial layer and a dielectric material arranged on the oxide layer, wherein the oxide layer and the dielectric material further comprise a first through hole corresponding to the first P-type doped region and a second through hole corresponding to the second P-type doped region;

    the transient voltage suppressor further comprises a groove etching window penetrating through the oxide layer and a groove penetrating through the P-type epitaxial layer and the N-type epitaxial layer, wherein the groove divides the N-type epitaxial layer into the first part and the second part, the groove also divides the P-type epitaxial layer into two parts, and the dielectric material is further filled in the groove and the groove etching window.

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