Inversion type light emitting diode with quantum dots and preparation method thereof

Inversion type light emitting diode with quantum dots and preparation method thereof

  • CN 107,565,065 A
  • Filed: 08/24/2017
  • Published: 01/09/2018
  • Est. Priority Date: 08/24/2017
  • Status: Active Application
First Claim
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1. A kind of 1. preparation method of inversion type light emitting diode with quantum dots, it is characterised in that including:

  • Underlay substrate (10) is provided, negative electrode (20) is formed on the underlay substrate (10);

    Monocrystalline TiO is formed on the negative electrode (20) using the method for Hydrothermal Synthesiss2Nano-stick array thin film, the monocrystalline TiO2Nano-stick array thin film includes vertical-growth on the negative electrode (20) and multiple monocrystalline TiO for being arranged in array2Nanometer rods, instituteState monocrystalline TiO2Nano-stick array thin film is electron transfer layer (30);

    Quantum dot light emitting layer (40) is formed on the electron transfer layer (30);

    Hole transmission layer (50) is formed on the quantum dot light emitting layer (40);

    Hole injection layer (60) is formed on the hole transmission layer (50);

    Anode (70) is formed on the hole injection layer (60).

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