A kind of vertical interconnected method of three-dimensional silicon hole based on graphene composite structure

A kind of vertical interconnected method of three-dimensional silicon hole based on graphene composite structure

  • CN 107,658,262 A
  • Filed: 09/28/2017
  • Published: 02/02/2018
  • Est. Priority Date: 09/28/2017
  • Status: Active Application
First Claim
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1. a kind of vertical interconnected method of three-dimensional silicon hole based on graphene composite structure, it is characterised in that comprise the following steps:

  • A. silicon hole (9) is made on silicon chip (1);

    B. in silicon chip (1) surface and silicon hole (9) inwall depositing insulating layer (2);

    C. barrier layer (3) are deposited on insulating barrier (2), the deposition of catalytic metals layer (4) on barrier layer (3);

    D. catalyzing metal layer (4) growth graphene composite structure layer (5) is utilized;

    E. graphene composite structure layer (5) surface patch dry film on silicon chip (1), exposure, development form photopolymer layer (6);

    F. the deposited seed layer (7) on silicon hole (9) bottom surface and photopolymer layer (6) surface;

    G. the filling conductive material (8) in silicon hole (9).

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