Three-dimensional through silicon via vertical interconnection method based on graphene composite structure

Three-dimensional through silicon via vertical interconnection method based on graphene composite structure

  • CN 107,658,262 B
  • Filed: 09/28/2017
  • Issued: 01/22/2021
  • Est. Priority Date: 09/28/2017
  • Status: Active Grant
First Claim
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1. A three-dimensional through silicon via vertical interconnection method based on a graphene composite structure is characterized by comprising the following steps:

  • a. manufacturing a silicon hole (9) on a silicon substrate (1);

    b. depositing an insulating layer (2) on the surface of the silicon substrate (1) and the inner wall of the silicon hole (9);

    c. depositing a barrier layer (3) on the insulating layer (2), depositing a catalytic metal layer (4) on the barrier layer (3);

    d. growing a graphene composite structure layer (5) by using the catalytic metal layer (4), wherein the graphene composite structure layer (5) is structurally divided into two layers, the upper layer is horizontal multi-layer graphene, and the lower layer is vertical multi-layer graphene;

    e. pasting a dry film on the surface of the graphene composite structure layer (5) on the silicon substrate (1), and exposing and developing to form a dry film layer (6);

    f. depositing a seed layer (7) on the bottom surface of the silicon hole (9) and the surface of the dry film layer (6);

    g. and filling the silicon hole (9) with a conductive material (8).

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