A kind of elemental semiconductor transverse direction double-diffused transistor with polycyclic Electric Field Modulated substrate

A kind of elemental semiconductor transverse direction double-diffused transistor with polycyclic Electric Field Modulated substrate

  • CN 107,681,004 A
  • Filed: 09/11/2017
  • Published: 02/09/2018
  • Est. Priority Date: 09/11/2017
  • Status: Active Application
First Claim
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1. a kind of elemental semiconductor transverse direction double-diffused transistor with polycyclic Electric Field Modulated substrate, including:

  • The substrate of semi-conducting material;

    Positioned at the base of substrate surface and drift region;

    Positioned at the source region of base region surface;

    Positioned at the drain region on drift region surface;

    It is characterized in that:

    The substrate is elemental semiconductorses;

    Adjacent substrate area is arranged to polycyclic Electric Field Modulated structure below drift region;

    The polycyclic Electric Field Modulated structure is suitable with the width of drift region, is centered on close to the one end in drain region, to close to baseOne end extend to be formed it is polycyclic;

    N-type or p-type doped chemical semi-conducting material is respectively adopted in each ring of the polycyclic Electric Field Modulated structure, or using JieMaterial;

    Accordingly, adjacent ring is with different materials, different doping types, different levels of doping any or any combinationMode is distinguished.

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