A kind of process for improving contact hole plug oxide depression

A kind of process for improving contact hole plug oxide depression

  • CN 107,731,831 A
  • Filed: 08/24/2017
  • Published: 02/23/2018
  • Est. Priority Date: 08/24/2017
  • Status: Active Grant
First Claim
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1. a kind of process for improving contact hole plug oxide depression, comprises the following steps:

  • Multilayer lamination structure is formed in substrate surface, specifically, first, there is provided substrate, the substrate surface are handed over formed with multilayerThe interlayer dielectric layer and sacrificial dielectric layer, the sacrificial dielectric layer that mistake stacks are formed between adjacent interlayer dielectric layer;

    Then,The smooth surface of top layer interlayer dielectric layer is obtained using chemical mechanical milling tech;

    One layer of cmp cutoff layer is deposited on the smooth surface;

    Photoetching is carried out to form top layer selection grid tangent line (Top Select Gate Cut), specifically, being ground first in chemical machineryGrind and form compound lithography layer on the surface of cutoff layer;

    Then needing to form selection grid tangent line (Top Select Gate Cut)Position implement photoetching;

    Performed etching to form top layer selection grid tangent line (Top Select Gate Cut), specifically, using conventional etching processThe raceway groove of top layer selection grid tangent line (Top Select Gate Cut) is formed in foregoing photoetching position, and removes the complex lightLayer is carved to expose the surface of the cmp cutoff layer;

    To top layer selection grid tangent line (Top Select Gate Cut), raceway groove is filled, specifically, being deposited in the raceway grooveFill top layer selection grid tangent line oxide material;

    Unnecessary top layer selection grid tangent line oxide material is removed, specifically, using chemical mechanical milling tech, top layer will be selectedSelect what is formed when grid tangent line (Top Select Gate Cut) raceway groove is filled in cmp cut-off layer surfaceUnnecessary top layer selection grid tangent line oxide material removes, to expose cmp cut-off layer surface and be formed smoothSurface;

    Remove the cmp cutoff layer;

    Unnecessary top layer selection grid tangent line oxide material is removed, is being removed specifically, being removed using chemical mechanical milling techUnnecessary after cmp cutoff layer, protrusion top layer selection grid tangent line oxide material, until top layer selection grid tangent lineOxide material and top layer interlayer dielectric layer flush, to obtain the surface of flat smooth;

    Connector oxide is deposited, specifically, being sunk on the surface of top layer interlayer dielectric layer and top layer selection grid tangent line oxide materialProduct connector oxide, and form silicon nitride layer in connector oxide surface.

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