A kind of flip LED and preparation method thereof

A kind of flip LED and preparation method thereof

  • CN 107,799,638 A
  • Filed: 10/24/2017
  • Published: 03/13/2018
  • Est. Priority Date: 10/24/2017
  • Status: Active Application
First Claim
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1. a kind of flip LED, it is characterised in that the flip LED includes:

  • Substrate;

    It is arranged on the n type semiconductor layer of the substrate surface;

    It is arranged on the active layer of the N-type semiconductor layer surface;

    It is arranged on the p type semiconductor layer of the active layer surface;

    It is arranged on the reflecting layer of the P-type semiconductor layer surface;

    It is arranged on the P electrode of the reflection layer surface, the P electrode and p type semiconductor layer electrical connection;

    For the groove of n type semiconductor layer described in exposed portion, N-type electrode, the N-type electrode and institute are provided with the grooveState n type semiconductor layer electrical connection;

    Wherein, the reflecting layer includes:

    It is arranged on the transparency conducting layer of the P-type semiconductor layer surface;

    It is arranged on described transparentFirst insulating barrier of conductive layer surface, first insulating barrier have at least one first through hole;

    It is arranged on first insulationThe metallic reflector of layer surface, the metallic reflector are electrically connected by the first through hole with the transparency conducting layer, so thatP electrode is obtained to electrically connect with the p type semiconductor layer.

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