A kind of semiconductor devices and its manufacture method

A kind of semiconductor devices and its manufacture method

  • CN 107,818,947 A
  • Filed: 09/26/2017
  • Published: 03/20/2018
  • Est. Priority Date: 09/26/2017
  • Status: Active Application
First Claim
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1. a kind of manufacture method of semiconductor devices, comprises the following steps:

  • Polysilicon is formed on substrate, and side wall is formed in the side of polysilicon;

    The deposited oxide barrier layer on substrate;

    By N+ and P+ Twi-lithography, etch the barrier oxide layers of relevant position respectively and injection forms N+ and P+ regions;

    Grow to form metal silicide layer in N+ and P+ overlying regions.

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