Integral circuit keyset

Integral circuit keyset

  • CN 108,109,989 A
  • Filed: 12/15/2017
  • Published: 06/01/2018
  • Est. Priority Date: 12/15/2017
  • Status: Active Application
First Claim
Patent Images

1. a kind of Integral circuit keyset (100), which is characterized in that including:

  • Silicon-based substrate (101), the first TSV holes (102),Two TSV holes (103), the first isolated groove (104), the second isolated groove (105), the 3rd isolated groove (106), the first diode(107), the second diode (108), plug (109), metal interconnecting wires (110), salient point (111) and separation layer (112);

    The first TSV holes (102), first isolated groove (104), first diode (107), second isolationGroove (105), the 2nd TSV holes (103), the 3rd isolated groove (106) and second diode (108) are transverselyIt is positioned apart from successively in the silicon-based substrate (101);

    The first TSV holes (102), the 2nd TSV holes (103), first isolated groove (104), second isolationGroove (105) and the 3rd isolated groove (106) run through the silicon-based substrate (101) along longitudinal direction;

    Wherein, described firstTSV holes (102) and filling polysilicon in the 2nd TSV holes (103), first isolated groove (104), second isolationFilling silica in groove (105) and the 3rd isolated groove (106);

    The anode of first diode (107) and second diode (108) is arranged in the silicon-based substrate (101)Portion, cathode are arranged at and the silicon-based substrate (101) lower part;

    The separation layer (112) is arranged at the silicon-based substrate (101) upper and lower surface;

    The plug (109) is arranged in the separation layer (112) and is located at the polysilicon, first diode respectively(107) and second diode (108) upper and lower surface;

    The metal interconnecting wires (110) are arranged in the separation layer (112) and make the first TSV through the plug (109)Hole (102), first diode (107), the 2nd TSV holes (103) and second diode (108) serial connection;

    The salient point (111) be arranged in the separation layer (112) and through the plug (109) respectively with the first TSV holes(102) lower end, the lower end of the 2nd TSV holes (103), the cathode of first diode (107) and the two or two poleThe cathode of pipe (108) is connected.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×