Igbt, IPM modules and air conditioner

Igbt, IPM modules and air conditioner

  • CN 108,155,228 A
  • Filed: 12/18/2017
  • Published: 06/12/2018
  • Est. Priority Date: 12/18/2017
  • Status: Active Application
First Claim
Patent Images

1. a kind of igbt, which is characterized in that the igbt includes:

  • Semiconductor substrate, the Semiconductor substrate have first surface;

    It is formed in active area and the drift region of the Semiconductor substrate first surface;

    The active area includes trench gate polar region;

    ItsIn,The drift region includes the first drift region and the second drift region, and first drift region is set close to the trench gate polar regionIt puts;

    Second drift region is set far from the trench gate polar region;

    The mobility of first drift region is higher than the described second driftMove the mobility in area.

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