Photoelectric sensor and preparation method thereof

Photoelectric sensor and preparation method thereof

  • CN 108,461,509 A
  • Filed: 04/03/2018
  • Published: 08/28/2018
  • Est. Priority Date: 04/03/2018
  • Status: Active Application
First Claim
Patent Images

1. a kind of photoelectric sensor, including:

  • Substrate, is arranged photodiode on the substrate, and with the photoelectricity twoThe thin film transistor (TFT) that pole pipe is electrically connected, which is characterized in that further include:

    Setting is on the substrate and away from the photoelectricity twoThe non-visible light conversion layer of the side of pole pipe, the non-visible light conversion layer are used to non-visible light being converted into visible light, forThe visible light is converted to electric signal by the photodiode.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×