The manufacturing method of groove MOSFET element based on microwave plasma oxidation

The manufacturing method of groove MOSFET element based on microwave plasma oxidation

  • CN 108,735,607 A
  • Filed: 05/25/2018
  • Published: 11/02/2018
  • Est. Priority Date: 05/25/2018
  • Status: Active Application
First Claim
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1. a kind of manufacturing method of the groove MOSFET element based on microwave plasma oxidation, including:

  • Notched gates etching after, using microwave plasma by the Oxidation of SiC on notched gates surface be silica, formed it is recessedSlot gate oxide,Wherein the step of formation groove gate oxide, includes:

    Silicon carbide substrates after progress notched gates etching are placed in microwave plasma generation device;

    It is passed through oxygen-containing gas, generates oxygen plasma;

    Oxygen plasma generates the silica of predetermined thickness with silicon carbide reactor;

    Stopping is passed through oxygen-containing gas, and reaction terminates;

    Wherein, the reaction temperature of oxygen plasma and silicon carbide is 500-900 DEG C, reaction pressure 400-1000mTorr.

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