A kind of longitudinal gate structure power device and preparation method thereof with local current barrier layer

A kind of longitudinal gate structure power device and preparation method thereof with local current barrier layer

  • CN 109,037,327 A
  • Filed: 07/18/2018
  • Published: 12/18/2018
  • Est. Priority Date: 07/18/2018
  • Status: Active Application
First Claim
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1. a kind of longitudinal gate structure power device with local current barrier layer, which is characterized in that on a semiconductor substrateSuccessively growth material buffer layer, intrinsic GaN layer and AlGaN potential barrier are embedded to local current barrier layer in the intrinsic GaN layer,Retain longitudinal conducting electric current channel window, is provided with drain electrode and gate electrode in the AlGaN potential barrier, in gate electrode side,The AlGaN potential barrier and the intrinsic GaN layer form step, and active electrode, the grid are arranged on the intrinsic GaN layer stepIt is separated between electrode and source electrode with dielectric layer.

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