A kind of GaN base Schottky barrier diode

A kind of GaN base Schottky barrier diode

  • CN 109,166,930 A
  • Filed: 08/28/2018
  • Published: 01/08/2019
  • Est. Priority Date: 08/28/2018
  • Status: Active Application
First Claim
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1. a kind of GaN base Schottky barrier diode, including substrate layer (101), the buffer layer being located on the substrate layer (101)(102), the channel layer (103) being located on the buffer layer (102), which is characterized in that further include:

  • Composite potential barrier layer is located on the channel layer (103);

    Cathode (107), positioned at one end of the composite potential barrier layer surface;

    Composite anode, positioned at the other end of the composite potential barrier layer surface;

    Intrinsic GaN cap (106) is in contact with the side of the composite anode and is located on the composite potential barrier layer;

    Base stage (111) is in contact with the side of the composite anode and is located in the intrinsic GaN cap in the part (106).

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