A kind of metal-oxide film and preparation method thereof, thin film transistor (TFT) and array substrate

A kind of metal-oxide film and preparation method thereof, thin film transistor (TFT) and array substrate

  • CN 109,461,660 A
  • Filed: 11/14/2018
  • Published: 03/12/2019
  • Est. Priority Date: 11/14/2018
  • Status: Active Application
First Claim
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1. a kind of preparation method of metal-oxide film characterized by comprisingMetal-oxide film is formed on underlay substrate;

  • Using anodizing, in a preset time, Xiang Suoshu metal-oxide film provides negative oxygen ion, makes the metalPart metals ion conversion in sull is at metal oxide.

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