Die assemblies and its manufacturing method on intermediary layer with dam structure

Die assemblies and its manufacturing method on intermediary layer with dam structure

  • CN 109,599,380 A
  • Filed: 09/16/2013
  • Published: 04/09/2019
  • Est. Priority Date: 07/10/2013
  • Status: Active Application
First Claim
Patent Images

1. a kind of semiconductor package part, comprising:

  • Intermediary layer chip has front, the back side and positioned at the back side and by the first comer edge of the intermediary layer chipThe corner regions limited with the second comer edge intersection, wherein the intermediary layer chip includes with the first face and with described theThe semiconductor substrate in the second opposite face and the substrate through vias across the semiconductor substrate on one side;

    Tube core is bonded to the front of the intermediary layer chip;

    AndAt least one dam structure, on the corner regions at the back side of the intermediary layer chip, and the dam structure is formedIn on the second face of the semiconductor substrate without being electrically connected with the substrate through vias, at least one described dam structure include fromAt least part for the sphere that the back side of the intermediary layer chip extends;

    Substrate is bonded to the back side of the intermediary layer chip, the dam structure and the substrate contact;

    Wherein, the dam structure include in the first comer edge and the second comer edge with the intermediary layer chip at leastThe edge of one edge alignment.

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