A kind of preparation method and a kind of LED component of GaN nano-pillar

A kind of preparation method and a kind of LED component of GaN nano-pillar

  • CN 109,980,054 A
  • Filed: 03/29/2019
  • Published: 07/05/2019
  • Est. Priority Date: 03/29/2019
  • Status: Active Application
First Claim
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1. a kind of preparation method of GaN nano-pillar, which is characterized in that form graphene layer on a sapphire substrate first, thenThe epitaxial growth GaN nano-pillar on the graphene layer.

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