GaN-diamond-Si semiconductor structure, device and preparation method

GaN-diamond-Si semiconductor structure, device and preparation method

  • CN 111,223,927 B
  • Filed: 04/22/2020
  • Issued: 07/30/2021
  • Est. Priority Date: 04/22/2020
  • Status: Active Grant
First Claim
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1. A preparation method of a GaN-diamond-Si semiconductor structure is characterized by comprising the following steps:

  • providing a first Si substrate, wherein the first Si substrate is a Si (111) substrate;

    forming an AlN nucleating layer on the first Si substrate;

    forming Al on the AlN nucleation layerxGa1-xN stack of layers forming said AlxGa1-xThe step of N stacking comprises forming Al on the AlN nucleating layer0.8Ga0.2N layer on the Al0.8Ga0.2Al is formed on the N layer0.5Ga0.5N layer and on said Al0.5Ga0.5Al is formed on the N layer0.3Ga0.7N layer, wherein, the Al0.3Ga0.7The thickness range of the N layer comprises 50 nm-100 nm;

    in the presence of Al0.3Ga0.7Forming a GaN channel layer on the N layer;

    forming Al on the GaN channel layer0.3Ga0.7N back barrier layer, and the Al0.3Ga0.7N back barrier layer and the Al0.3Ga0.7The N layers have the same thickness so as to form symmetrical structures on two opposite surfaces of the GaN channel layer;

    by CVD method to include CH4And H2At 650-950 ℃

    in the Al0.3Ga0.7Forming a diamond film on the N back barrier layer, wherein the thickness range of the diamond film comprises 1-5 μ

    m;

    providing a second Si substrate, wherein the second Si substrate is a Si (100) substrate, and bonding the diamond film and the second Si substrate, wherein the bonding step comprises the steps of respectively carrying out surface activation treatment on the diamond film and the second Si substrate under a vacuum condition, and bonding the diamond film and the second Si substrate under the conditions of room temperature and a pressure intensity range of 1-2 MPa;

    with said Al0.3Ga0.7The N layer is used as a separation layer, and the first Si substrate, the AlN nucleating layer and part of the Al are removedxGa1-xN is laminated while a part of the Al is remained0.3Ga0.7N layer to form Al0.3Ga0.7A N barrier layer, and the Al0.3Ga0.7The thickness range of the N barrier layer comprises 20 nm-30 nm.

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