Method for forming delicate pattern of semi-conductor device

Method for forming delicate pattern of semi-conductor device

  • CN 1,142,121 A
  • Filed: 06/24/1996
  • Published: 02/05/1997
  • Est. Priority Date: 06/23/1995
  • Status: Abandoned Application
First Claim
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1. method that forms the semiconductor fine pattern is characterized in that may further comprise the steps:

  • Silicon substrate is provided;

    At the Butut of surface of silicon overlay pattern material with the formation pattern;

    In addition, in the surface of silicon that comprises described cloth map-area a plurality of dummy pattern are set, the width of each dummy pattern is less than the minimum widith that allows photoetching to produce;

    The Butut that is provided with described meticulous dummy pattern above the utilization prepares master reticle;

    AndBy described master reticle the Butut on the silicon substrate is exposed.

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