Silicon/germanium-silicon verticle noded type field effect transistor

Silicon/germanium-silicon verticle noded type field effect transistor

  • CN 1,193,193 A
  • Filed: 01/16/1998
  • Published: 09/16/1998
  • Est. Priority Date: 02/19/1997
  • Status: Abandoned Application
First Claim
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1. junction field effect transistor comprises:

  • First semiconductor layer of the first kind;

    Second semiconductor layer of the light dope first kind that on first semiconductor layer, forms;

    Be formed on second semiconductor layer, wherein have three semiconductor layer of window with second type of described second semiconductor layer of expose portion;

    Be formed on described the 3rd semiconductor layer, wherein have window with the 3rd semiconductor in the layer of dielectric material that interrelates of window;

    Si 1-xGe xThe 4th semiconductor layer of the first kind, wherein x increases with thickness, it is formed in the described window of described the 3rd semiconductor layer;

    Be formed in the described window of described the 3rd semiconductor layer, Si 1-yGe yThe 5th semiconductor layer of the first kind, wherein y is constant substantially;

    With Be formed in the described window of described layer of dielectric material, Si 1-zGe zThe 6th semiconductor layer of the first kind, wherein z reduces with thickness.

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