Method for making monocrystal silicon and wafer by controlling pulling-speed distribution and products thereof

Method for making monocrystal silicon and wafer by controlling pulling-speed distribution and products thereof

  • CN 1,206,755 A
  • Filed: 02/13/1998
  • Published: 02/03/1999
  • Est. Priority Date: 02/13/1997
  • Status: Abandoned Application
First Claim
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1. method of making silicon ingot in the stove of hot-zone, it comprises the following steps:

  • Plant at the pulling rate branch that draws silicon ingot by the molten silicon in the stove of hot-zone, draw silicon ingot by the molten silicon in the stove of hot-zone in the axial direction, its pulling rate distributes and wants enough high, to prevent the gap agglomerates, and enough low, so that vacancy condensation group is limited to crystal ingot being rich in the district of room on axially.

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