Method of forming semiconductor device

Method of forming semiconductor device

  • CN 1,211,814 A
  • Filed: 09/03/1998
  • Published: 03/24/1999
  • Est. Priority Date: 09/03/1997
  • Status: Abandoned Application
First Claim
Patent Images

1. the manufacture method of a semiconductor device, it is characterized in that, on semiconductor chip, carry out in the molecular line epitaxial process of growth of a plurality of compound semiconductor crystallizing layers, comprise the compound semiconductor crystallizing layer of In in growth after, temporarily stop to comprise whole supplies of As, after the evaporation again that substrate temperature rises to In begins more than the temperature, grow and the different semiconductor crystal layer of described compound semiconductor that comprises In.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×