Susceptorless reactor for growing epitaxial layers by chemical vapor deposition

Susceptorless reactor for growing epitaxial layers by chemical vapor deposition

  • CN 1,238,576 C
  • Filed: 08/21/2001
  • Issued: 01/25/2006
  • Est. Priority Date: 02/07/2001
  • Status: Active Grant
First Claim
Patent Images

1. one kind by the rectilinear device of chemical vapor deposition at one or more wafer growing epitaxial layers, and described device comprises:

  • One reaction chamber;

    Has a vertical rotatable shaft that is arranged in the described reaction chamber;

    Be used to the wafer carrier that transmits described one or more wafer and described one or more wafers are provided support;

    Described wafer carrier by medially with the described top that is installed in described main shaft separably on and in described sedimentary process, contact with it at least;

    Described wafer carrier can easily be removed from the described top of described main shaft, to be used to transmitting described wafer carrier with the described one or more wafers of loading or unloading;

    AndBe arranged on the radiant heater element that is used for its heating under the described wafer carrier.

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