Method for fabricating ferroelectric memory device

Method for fabricating ferroelectric memory device

  • CN 1,239,828 A
  • Filed: 06/18/1999
  • Published: 12/29/1999
  • Est. Priority Date: 06/20/1998
  • Status: Abandoned Application
First Claim
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1. a method of making ferroelectric memory device on Semiconductor substrate has transistor on the described Semiconductor substrate, and described transistor has source/drain region and grid, said method comprising the steps of:

  • On described Semiconductor substrate, form first insulating barrier;

    Form ferroelectric condenser on described first insulating barrier, described ferroelectric condenser is made of bottom electrode, ferroelectric film and top electrode, and described ferroelectric film comprises the titanium bigger than zirconates amount;

    Form second insulating barrier;

    Corrode the selection part of described second insulating barrier, and form first opening that arrives described bottom electrode;

    Heat-treat, to prevent the reaction at the interface between described bottom electrode and the described ferroelectric film;

    Corrode described second and first insulating barrier, and form second opening that arrives described source/drain region;

    AndOn described second insulating barrier, in described first and second openings, form contact layer, to be electrically connected described bottom electrode and described source/drain region.

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