Apparatus for manufacturing semiconductor device, and method of manufacturing capacitor of semiconductor device thereby

Apparatus for manufacturing semiconductor device, and method of manufacturing capacitor of semiconductor device thereby

  • CN 1,246,882 C
  • Filed: 12/01/1998
  • Issued: 03/22/2006
  • Est. Priority Date: 03/02/1998
  • Status: Active Grant
First Claim
Patent Images

1. make the method for capacitor of semiconductor device, may further comprise the steps:

  • A) bottom electrode of formation capacitor of semiconductor device on the ad hoc structure that is formed on the Semiconductor substrate;

    B) on the exposed surface of bottom electrode, form hemisphere grain (HSG) film;

    C) before processing procedure subsequently, stablize described HSG film, to form stable HSG film;

    The described stable electronics charging of HSG film surface being carried out 5-20 minute that comprises, to prevent because the reducing of the HSG film surface area that the wearing and tearing of HSG film cause during the cleaning step subsequently;

    D) clean stabilisation the HSG film.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×