Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

  • CN 1,272,959 A
  • Filed: 06/12/1998
  • Published: 11/08/2000
  • Est. Priority Date: 06/12/1998
  • Status: Abandoned Application
First Claim
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1. a semiconductor device has:

  • the semiconductor element that has formed integrated circuit;

    Integrated circuit at this semiconductor element forms a plurality of electrode welding zones that face one side forms;

    By conductor layer conductivity be connected to the bump electrode that outside on this electrode welding zone connects usefulness;

    And this integrated circuit form form between face and this electrode welding zone and this bump electrode and this conductor layer, bond to the stress relaxation layer on these parts, it is characterized in that;

    From the surface of this stress relaxation layer this stress relaxation layer excision more than 1/3rd, is divided into a plurality of zones with this stress relaxation layer.

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