Semiconductor device

Semiconductor device

  • CN 1,296,289 A
  • Filed: 11/10/2000
  • Published: 05/23/2001
  • Est. Priority Date: 11/10/1999
  • Status: Abandoned Application
First Claim
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1. semiconductor device that comprises following circuit, described circuit comprises work MOS transistor and the off-state MOS transistor that is connected in parallel to each other, wherein, the drain electrode of described work MOS transistor is surrounded by grid.

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