Semiconductor integrated circuit device and method for manufacturing the same

Semiconductor integrated circuit device and method for manufacturing the same

  • CN 1,307,721 C
  • Filed: 01/10/1997
  • Issued: 03/28/2007
  • Est. Priority Date: 01/12/1996
  • Status: Active Grant
First Claim
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1. conductor integrated circuit device comprises:

  • Multiple bit lines;

    Many word lines;

    Respectively have MISFET and a plurality of memory cells that are coupled capacitor element thereon, each memory cell is connected in a described bit line and a described word line;

    Be arranged at first dielectric film between described word line and the described bit line;

    AndBe arranged at second dielectric film between described bit line and the described capacitor element,Wherein, constitute in proper order by tungsten film or titanium silicide film on the tungsten nitride film on polysilicon film, the described polysilicon film or titanium nitride film and described tungsten nitride film or the titanium nitride film as the described word line of each bar of described MISFET gate electrode,The described bit line of each bar is made of in proper order tungsten film or the titanium silicide film on titanium nitride film or tungsten nitride film and described titanium nitride film or the tungsten nitride film,Described capacitor element is positioned at a described bit line top,Described MISFET has source region and drain region,Article one, described bit line ties by the polysilicon that forms in described first dielectric film and is connected to one of described source region and drain region, andDescribed capacitor element ties another that is connected to described source region and drain region by the polysilicon bolt that forms with by what combined films, tungsten film or the polysilicon film of titanium nitride film and tungsten film constituted in described first dielectric film.

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