Slurry for chemical-mechanical polishing and forming method, semiconductor device making method

Slurry for chemical-mechanical polishing and forming method, semiconductor device making method

  • CN 1,333,319 A
  • Filed: 07/13/2001
  • Published: 01/30/2002
  • Est. Priority Date: 07/14/2000
  • Status: Active Application
First Claim
Patent Images

1. CMP use slurry, it comprises:

  • liquid;

    Be contained in the multiple polishing particles in this liquid, this polishing particles comprises at least a above organic filler and at least a above inorganic particulate, and described organic filler and inorganic particulate pass through thermal bond and integrated.

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