Semiconductor device and its producing method

Semiconductor device and its producing method

  • CN 1,348,199 A
  • Filed: 09/13/2001
  • Published: 05/08/2002
  • Est. Priority Date: 12/04/1992
  • Status: Active Application
First Claim
Patent Images

1. the semiconductor device that on insulating surface, forms, described device comprises:

  • A semiconductor island that comprises silicon metal;

    Leak and channel region in the source that forms in described semiconductor island;

    A gate electrode adjacent with described semiconductor island has a gate insulating film to place therebetween;

    Wherein said semiconductor island comprises a kind of material, is selected to comprise Ni, and Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Sc, Ti, V, Cr, Mn, Cu, Zn, the group of Au and Ag has basic concentration uniformly on whole semiconductor island.

View all claims

    Thank you for your feedback