Method for making semiconductor side wall fin

Method for making semiconductor side wall fin

  • CN 1,349,249 A
  • Filed: 10/18/2001
  • Published: 05/15/2002
  • Est. Priority Date: 10/18/2000
  • Status: Active Application
First Claim
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1. method that forms field-effect transistor (FET) comprises:

  • Substrate is provided;

    Cambium layer on substrate, this layer has a side;

    Form epi channels on this side, this raceway groove has the first side wall;

    Remove this layer to expose second sidewall of raceway groove;

    Form the source electrode and the drain region that connect with the first raceway groove end;

    AndForm grid, at least one sidewall of its contiguous raceway groove.

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