Semiconductor laser device and mfg. method thereof
Semiconductor laser device and mfg. method thereof
 CN 1,383,240 A
 Filed: 04/03/2002
 Published: 12/04/2002
 Est. Priority Date: 04/03/2001
 Status: Active Application
First Claim
1. ridge peak waveguide type semiconductor laser comprises:
 The bar shaped ridge is formed in the top of top covering at least;
AndAs the insulation film of current limliting layer, said insulation film is formed on the part of the both sides that are positioned at said ridge of two side surfaces of said ridge and said top covering;
It is characterized in that supposing the effective refractive index n of the oscillation wavelength of said ridge _{Eff1}Effective refractive index n with the oscillation wavelength of part on each side of the both sides of said ridge _{Eff2}Between effective refractive index difference Δ
n be expressed as Δ
n=n _{Eff1}n _{Eff2}, the ridge width means is W. Be provided with following at least one of them, the thickness that the kind of the kind of said insulation film and thickness, the thickness at the electrode film on the said insulation film, ridge height, said top covering promptly is set and is positioned at the rest layers part of the said top covering on each side of both sides of said ridge, make the combination of W and Δ
n be in the specific Δ
nW zone on the XY reference axis, on Xaxis, draw W (μ
m), Yplot on X axis Δ
n limits regional the making of said Δ
nW and satisfies following three relational expressions;
Δ
n≤
a×
W+B (1)(" a " and " b " is the constant of determining the flex point level here),W≥
c (2)(" c " is the constant of the minimum ridge width of the described ridge of regulation when forming here), andΔ
n≥
d (3)(" d " is by being parallel to the humorous required half width value θ
of direction farfield pattern that swings the heterojunction boundary of structure of said laser here _{Para}The constant of determining).
Chinese PRB Reexamination
Abstract
A method of fabricating a ridgewaveguide type semiconductor laser device having a large halfvalue width and a high kink level is provided. First, an effective refractive index difference DELTAn between an effective refractive index neff1 of the ridge and an effective refractive index neff2 of a portion on each of both sides of the ridge is taken as DELTAn=neff1neff2, and a ridge width is taken as W. On such an assumption, constants '"'"'a'"'"', '"'"'b'"'"', '"'"'c'"'"', and '"'"'d'"'"' of the following three equations are set on XY coordinates (Xaxis: W, Yaxis: DELTAn). The first equation is expressed by DELTAn<=axW+b, where '"'"'a'"'"' and '"'"'b'"'"' are constants determining a kink level. The second equation is expressed by W>=c, where '"'"'c'"'"' is a constant specifying a minimum ridge width at the time of formation of the ridge. The third equation is expressed by DELTAn>=d, where '"'"'d'"'"' is a constant specified by a desired halfwidth value thetapara. Then at least either of a kind and a thickness of an insulating film, a thickness of an electrode film on the insulating film, and a kind and a thickness of a portion, located on each of both the sides of the ridge, of the upper cladding layer is set in such a manner that a combination of DELTAn and W satisfies the above three equations.
7 Claims

1. ridge peak waveguide type semiconductor laser comprises:

The bar shaped ridge is formed in the top of top covering at least;
AndAs the insulation film of current limliting layer, said insulation film is formed on the part of the both sides that are positioned at said ridge of two side surfaces of said ridge and said top covering; It is characterized in that supposing the effective refractive index n of the oscillation wavelength of said ridge _{Eff1}Effective refractive index n with the oscillation wavelength of part on each side of the both sides of said ridge _{Eff2}Between effective refractive index difference Δ
n be expressed as Δ
n=n _{Eff1}n _{Eff2}, the ridge width means is W.Be provided with following at least one of them, the thickness that the kind of the kind of said insulation film and thickness, the thickness at the electrode film on the said insulation film, ridge height, said top covering promptly is set and is positioned at the rest layers part of the said top covering on each side of both sides of said ridge, make the combination of W and Δ
n be in the specific Δ
nW zone on the XY reference axis, on Xaxis, draw W (μ
m), Yplot on X axis Δ
n limits regional the making of said Δ
nW and satisfies following three relational expressions;Δ
n≤
a×
W+B (1)(" a " and " b " is the constant of determining the flex point level here), W≥
c (2)(" c " is the constant of the minimum ridge width of the described ridge of regulation when forming here), and Δ
n≥
d (3)(" d " is by being parallel to the humorous required half width value θ
of direction farfield pattern that swings the heterojunction boundary of structure of said laser here _{Para}The constant of determining).


2. method of making ridge peak waveguide type semiconductor laser, this laser has a kind of structure, promptly the top of top covering is formed on the bar shaped chi chung, is formed on as the insulation film of current limliting layer on the part of the both sides that are positioned at said ridge of two side surfaces of said ridge and said top covering at least, and said method comprises:

Constant is provided with step, promptly supposes the effective refractive index n of the oscillation wavelength of said ridge _{Eff1}Effective refractive index n with the oscillation wavelength of part on each side of the both sides of said ridge _{Eff2}Between effective refractive index difference Δ
n be expressed as Δ
n=n _{Eff1}n _{Eff2}, the ridge width means is W, and constant " a ", " b ", " c " and " d " of following three relational expressions are set on the XY reference axis, draws W (μ
m) on Xaxis, Yplot on X axis Δ
n,Δ
n a×
W+B (1)(" a " and " b " is the constant of determining the flex point level here), W≥
c (2)(constant of the minimum ridge width when " c " is the formation of regulation ridge here), and Δ
n≥
d (3)(" d " is by being parallel to the humorous required half width value θ
of direction farfield pattern that swings the heterojunction boundary of structure of said laser here _{Para}The constant of determining).


3. according to the method for the manufacturing ridge peak waveguide type semiconductor laser of claim 2, it is characterized in that the relation that said constant " a " in the said relational expression (1) and " b " set up between Δ
 n and the flex point level by experiment determines;
Said constant " d " in the said relational expression (3) is set up Δ
n and θ
by experiment _{Para}Between relation determine;
AndThe value that the corrosion step of said constant " c " in the said relational expression (2) when forming said ridge limits.
 n and the flex point level by experiment determines;

4. according to the method for the manufacturing ridge peak waveguide type semiconductor laser of claim 2, further comprise:
Film thickness etc. step is set, the mode that satisfies said three relational expressions (1), (2) and (3) with Δ
n and W is provided with thickness at least a of the rest layers part on each side of the both sides that are arranged in said ridge of the kind of the kind of said insulation film and thickness, the thickness at the electrode film on the said insulation film, ridge height, said top covering and said top covering.

5. according to the method for the manufacturing ridge peak waveguide type semiconductor laser of claim 3, further comprise:
Film thickness etc. step is set, the mode that satisfies said three relational expressions (1), (2) and (3) with Δ
n and W is provided with thickness at least a of the rest layers part on each side of the both sides that are arranged in said ridge of the kind of the kind of said insulation film and thickness, the thickness at the electrode film on the said insulation film, ridge height, said top covering and said top covering.

6. according to the method for the manufacturing ridge peak waveguide type semiconductor laser of claim 4, it is characterized in that when said ridge peak waveguide type semiconductor laser is based on the GaN semiconductor laser, being provided with in the step of said film thickness etc., satisfy said three relational expressions (1) with Δ
 n and W, (2) and the mode of (3) be provided with following at least one of them, i.e. the kind of said insulation film and thickness, the thickness of the electrode film on said insulation film, the ridge height, the kind of said top covering, the thickness of the rest layers part on each side of the both sides that are positioned at said ridge of said top covering, the Al component ratio and the thickness of AlGaN covering, the thickness of GaN light waveguidelayer, the thickness of the trap layer of GaInN multiple quantum well active layer and In component ratio, the In component ratio on the barrier layer of GaInN multiple quantum well active layer.

7. according to the method for the manufacturing ridge peak waveguide type semiconductor laser of claim 5, it is characterized in that when said ridge peak waveguide type semiconductor laser is based on the GaN semiconductor laser, being provided with in the step of said film thickness etc., satisfy said three relational expressions (1) with Δ
 n and W, (2) and the mode of (3) be provided with following at least one of them, i.e. the kind of said insulation film and thickness, the thickness of the electrode film on said insulation film, the ridge height, the kind of said top covering, the thickness of the rest layers part on each side of the both sides that are positioned at said ridge of said top covering, the Al component ratio and the thickness of AlGaN covering, the thickness of GaN light waveguidelayer, the thickness of the trap layer of GaInN multiple quantum well active layer and In component ratio, the In component ratio on the barrier layer of GaInN multiple quantum well active layer.
Specification(s)